baw101 surface mount dual, isolated high voltage silicon switching diodes description: the central semiconductor baw101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded sot-143 surface mount case. this device is designed for applications requiring dual high voltage switching diodes. marking codes: cjp or baw101 maximum ratings: (t a =25 c) symbol units continuous reverse voltage v r 300 v peak repetitive reverse voltage v rrm 300 v continuous forward current i f 200 ma peak repetitive forward current i frm 400 ma peak forward surge current, tp=1.0s i fsm 4.5 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25 c unless otherwise noted) symbol test conditions min typ max units i r v r =250v 150 na i r v r =250v, t a =150 c 50 a bv r i r =100a 300 v v f i f =100ma 0.9 1.3 v c t v r =0, f=1.0mhz 5.0 pf t rr i f =i r =30ma, i rr =3.0ma, r l =100 50 ns sot-143 case r7 (8-february 2011) www.centralsemi.com
baw101 surface mount dual, isolated high voltage silicon switching diodes sot-143 case - mechanical outline lead code: 1) cathode d1 2) cathode d2 3) anode d2 4) anode d1 marking codes: cjp or baw101 pin configuration www.centralsemi.com r7 (8-february 2011)
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